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PDF ME80N08 Data sheet ( Hoja de datos )
| Número de pieza | ME80N08 | |
| Descripción | N-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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N- Channel 80-V (D-S) MOSFET
ME80N08/ME80N08-G
GENERAL DESCRIPTION
The ME80N08 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
PIN CONFIGURATION
(TO-220)
Top View
FEATURES
● RDS(ON)≦4.9mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch
e Ordering Information: ME80N08 (Pb-free)
ME80N08-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Tc=25℃
TC=70℃
Pulsed Drain Currenta
Power Dissipation
TC=25℃
TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient**
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
RθJC
Limit
80
±20
196
164
784
300
210
-55 to 175
0.5
Unit
V
V
A
A
W
℃
℃/W
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
NMnaoy,v2, 021020-9V–erV1e.2rsion 1.0
01
1 page  
N- Channel 80-V (D-S) MOSFET
ME80N08/ME80N08-G
TO-220 Package Outline
NMnaoy,v2, 021020-9V–erV1e.2rsion 1.0
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME80N08.PDF ] | |
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