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Fairchild Semiconductor - 30V N-Channel PowerTrench MOSFET

Numéro de référence FDD6606
Description 30V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6606 fiche technique
February 2004
FDD6606
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
DC/DC converter
Motor Drives
Features
75 A, 30 V
RDS(ON) = 6 m@ VGS = 10 V
RDS(ON) = 8 m@ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
75
100
71
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6606
FDD6606
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6606 Rev B (W)

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