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FDD6676AS fiches techniques PDF

Fairchild Semiconductor - 30V N-Channel PowerTrench SyncFET

Numéro de référence FDD6676AS
Description 30V N-Channel PowerTrench SyncFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6676AS fiche technique
FDD6676AS
30V N-Channel PowerTrench® SyncFET
April 2008
tm
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6676AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild’s monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
90 A, 30 V
RDS(ON) = 5.7 m@ VGS = 10 V
RDS(ON) = 7.1 m@ VGS = 4.5 V
Includes SyncFET schottky body diode
Low gate charge (46nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676AS
FDD6676AS
13’’
D
G
S
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6676AS Rev A1(X)

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