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PDF MTB55N06Z Data sheet ( Hoja de datos )
| Número de pieza | MTB55N06Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a drain−to−source diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor−Absorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp ≤ 10 μs)
ID 55
ID 35.5
IDM 165
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD 113
0.91
2.5
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc,
VGS = 10 Vdc, Peak IL = 55 Apk,
L = 0.3 mH, RG = 25 Ω)
EAS
454 mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
RθJC
RθJC
RθJA
°C/W
1.1
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
55 AMPERES
60 VOLTS
RDS(on) = 18 mΩ
N−Channel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB55N06Z
YWW
12
Gate Drain
3
Source
MTB55N06Z
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB55N06Z
MTB55N06ZT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MTB55N06Z/D
1 page  
MTB55N06Z
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (seconds)
0.1
1.0 10
Figure 13. Thermal Response
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MTB55N06Z.PDF ] | |
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