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PDF MCH6660 Data sheet ( Hoja de datos )
| Número de pieza | MCH6660 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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MCH6660
Power MOSFET
20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual
www.onsemi.com
Features
• ON-resistance Nch : RDS(on)1=105mW(typ.)
Pch : RDS(on)1=205mW(typ.)
• Pb-Free, Halogen Free and RoHS Compliance
• Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt)
• Nch MOSFET and Pch MOSFET are put in MCPH6 Package
• 1.8V Drive
• ESD Diode - Protected Gate
Applications
• General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
N-channel P-channel
20 --20
±10 ±10
2 --1.5
8 --6
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
MCH6660-TL-H
MCH6660-TL-W
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0 to 0.02
1 23
0.65 0.3
123
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
TL
Electrical Connection
65
4
654
MCPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
1 23
XM
©Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 2
1
Publication Order Nunber:
MCH6660/D
1 page  
MCH6660
RDS(on) -- VGS
[Pch]
700
Ta=25°C
600
ID= --0.1A
500 --0.3A
400 --0.75A
300
200
RDS(on) -- Ta
[Pch]
700
600
500 VGS= --1.8V, ID= --0.1A
400
300
200
VVGGSS==---2-4.5.5VV, ,IDID==---0-.03.A75A
100 100
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
5
Gate-to-SogurFceSVo--ltagIeD, VGS -- V
IT16648
[Pch]
VDS= --10V
3
2 25°C
1.0
7
Ta= --25°C75°C
5
3
2
0.1
7
--0.01
5
3
2
23
5 7 --0.1
2 3 5 7 --1.0
23
Drain Current, ID -- A
SW Time -- ID
HD14618
[Pch]
VDD= --10V
VGS= --4.5V
td(off)
10 tf
tr
7
5 td(on)
3
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16649
IS -- VSD
[Pch]
5
3
VGS=0V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
3
2
100
7
5
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Forward Diode Voltage, VSD -- V HD14619
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
Ciss
3 Coss
2 Crss
2
--0.1
2
--4.5 VDS= --10V
--4.0 ID= --1.5A
3 5 7 --1.0
Drain Current,
VGS --
IQDg--
A
23
HD141104
[Pch]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT14622
10
7
0 --2 --4 --6 --8 --10 --12 --14 --16
Drain-to-Source
S
Voltage,
OA
VDS
--
V
--10
7
5
3
2
--1.0
7
5
3
2
IDP= --6A (PW≤10μs)
ID= --1.5A
Operation in
DC ope1r0a0timo1ns0ms1ms
100μs
this area is
--0.1 limited by RDS(on).
7
5
--18 --20
IT14621
[Pch]
3
2
Ta=25°C
Single pulse
--0.01 When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS -- V
5 7 --100
HD16650
www.onsemi.com
5
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| PDF Descargar | [ Datasheet MCH6660.PDF ] | |
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