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MMDF2C02E fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence MMDF2C02E
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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MMDF2C02E fiche technique
MMDF2C02E
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Drain Current
Continuous NChannel
PChannel
Pulsed
NChannel
PChannel
VDSS
VGS
ID
IDM
25 Vdc
± 20 Vdc
3.6 Adc
2.5
18
13
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C (Note 2)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A,
L = 6.0 mH, RG = 25 Ω) NChannel
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A,
L = 10 mH, RG = 25 Ω)
PChannel
Thermal Resistance Junction to Ambient
(Note 2)
TJ and
Tstg
PD
EAS
55
to 150
2.0
°C
Watts
mJ
RθJA
245
245
62.5 °C/W
Maximum Lead Temperature for Soldering,
0.0625from case. Time in Solder Bath is
10 seconds.
TL 260 °C
1. Negative signs for PChannel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2.5 AMPERES, 25 VOLTS
RDS(on) = 100 mW (NChannel)
RDS(on) = 250 mW (PChannel)
NChannel
D
PChannel
D
GG
SS
8
1
SO8
CASE 751
STYLE 14
MARKING
DIAGRAM
8
F2C02
ALYW
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN ASSIGNMENT
NSource
NGate
PSource
PGate
18
27
36
45
Top View
NDrain
NDrain
PDrain
PDrain
ORDERING INFORMATION
Device
Package
Shipping
MMDF2C02ER2
SO8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 8
1
Publication Order Number:
MMDF2C02E/D

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