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PDF MMDF4P03HD Data sheet ( Hoja de datos )
| Número de pieza | MMDF4P03HD | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMDF4P03HD
Preferred Device
Power MOSFET
4 A, 30 V, P−Channel SO−8, Dual
Dual MOSFET devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dc−dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Source Current − Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VGS
ID
IDM
IS
PD
30 Vdc
± 20 Vdc
4.0 Adc
20 Apk
1.7 Adc
2.0 Watts
Operating and Storage Temperature Range TJ, Tstg − 55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, IL = 9.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from Case for 10 s)
EAS
RθJA
TL
450 mJ
62.5 °C/W
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
4 AMPERES
30 VOLTS
RDS(on) = 85 mW
P−Channel
DD
GG
SS
8
1
SO−8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
DP0303
AYWW
1
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping†
MMDF4P03HDR2 SO−8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MMDF4P03HD/D
1 page  
MMDF4P03HD
7.0
QT
6.0
5.0
4.0 Q1
Q2
30
VGS
20
1000
VDD = 15 V
ID = 3 A
100
VGS = 10 V
TJ = 25°C
td(off)
tf
3.0
2.0
ID = 3 A
TJ = 25°C
10
1.0
Q3
0
0 2.0 4.0
6.0 8.0
VDS
10 12
0
14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
tr
10 td(on)
1.0
1.0
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
2.5
VGS = 0 V
TJ = 25°C
2.0
1.5
1.0
0.5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMDF4P03HD.PDF ] | |
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