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PDF MMBZ16V Data sheet ( Hoja de datos )
| Número de pieza | MMBZ16V | |
| Descripción | 40 Watt Peak Power Zener Transient Voltage Suppressors | |
| Fabricantes | ON Semiconductor | |
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MMBZ16V, SZMMBZ16V
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 15.2 V to 16.80 V
• Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
• ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
http://onsemi.com
SOT−23
CASE 318
STYLE 12
CATHODE 1
CATHODE 2
3 ANODE
MARKING DIAGRAM
XXXMG
G
1
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
MMBZ16VAL/D
1 page  
MMBZ16V, SZMMBZ16V
TYPICAL CHARACTERISTICS
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100 50% OF IPP.
PEAK VALUE − IPP
HALF VALUE −
IPP
2
50
tP
0
01
23
t, TIME (ms)
4
Figure 5. Pulse Waveform
100
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10 UNIDIRECTIONAL
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
100
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1 10 100
PW, PULSE WIDTH (ms)
1000
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
1
0.1
1 10 100
PW, PULSE WIDTH (ms)
1000
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMBZ16V.PDF ] | |
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