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SS7505 fiches techniques PDF

GOOD-ARK - 75V N-Channel MOSFET

Numéro de référence SS7505
Description 75V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SS7505 fiche technique
Main Product Characteristics
VDSS
75V
RDS(on) 3.3mohm(typ.)
ID 170A
TO-220
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
Lead free product
SSF7505
75V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
170
110
670
272
2.0
75
± 20
960
80
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
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