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PDF SSF2N60 Data sheet ( Hoja de datos )
| Número de pieza | SSF2N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF2N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Main Product Characteristics
VDSS
600V
RDS(on) 3.6ohm(typ.)
ID 2A
Features and Benefits
TO-220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF2N60
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=55mH
Avalanche Current @ L=55mH
Operating Junction and Storage Temperature Range
Max.
2
1.3
8
54
0.43
600
± 30
110
2
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.0
1 page  
SSF2N60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF2N60.PDF ] | |
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