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SSF5N50D fiches techniques PDF

GOOD-ARK - 500V N-Channel MOSFET

Numéro de référence SSF5N50D
Description 500V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF5N50D fiche technique
Main Product Characteristics
VDSS
RDS(on)
ID
500V
1.5Ω (typ.)
5A
TO-252
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
Lead free product
SSF5N50D
500V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=60mH
Avalanche Current @ L=60mH
Operating Junction and Storage Temperature Range
Max.
5
3.1
17
104
0.83
500
±30
307
3.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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