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PDF SSF5NS65UF Data sheet ( Hoja de datos )
| Número de pieza | SSF5NS65UF | |
| Descripción | 650V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
VDSS
650V
RDS(on) 0.9Ω (typ.)
ID 5A ①
Features and Benefits
TO-220F
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
SSF5NS65UF
650V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF5NS65UF series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
5①
3.1①
15
28
0.224
650
± 30
144
1.7
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.0
1 page  
Typical Electrical and Thermal Characteristics
SSF5NS65UF
650V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7.Drain-to-Source Voltage Vs. Gate-to-Source Voltage
www.goodark.com
Page 5 of 7
Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF5NS65UF.PDF ] | |
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