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SSF6NS70G fiches techniques PDF

GOOD-ARK - 700V N-Channel MOSFET

Numéro de référence SSF6NS70G
Description 700V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF6NS70G fiche technique
Main Product Characteristics
VDSS
700V
RDS(on) 1.2Ω (typ.)
ID 5.2A
Features and Benefits
TO-251
SSF6NS70G
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
SSF6NS70G/D/F
700V N-Channel MOSFET
TO-252
SSF6NS70D
TO-220F
Schematic Diagram
SSF6NS70F
Description
The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology
and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
For TO-251/TO-252 package
For TO-220F package
Linear Derating Factor
For TO-251/TO-252 package
For TO-220F package
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5.2
3.2
15.6
50
31.2
0.4
0.25
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
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