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PDF SSF8N60 Data sheet ( Hoja de datos )

Número de pieza SSF8N60
Descripción 600V N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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No Preview Available ! SSF8N60 Hoja de datos, Descripción, Manual

FEATURES
Extremely high dv/dt capability
Low Gate Charge Qg results in Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Lead free product
DESCRIPTION
The SSF8N60 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
APPLICATIONS
High current, high speed switching
Ideal for off-line power supply, adaptor, PFC
SSF8N60
600V N-Channel MOSFET
VDSS = 600V
ID = 8A
Rdson = 0.85Ω (typ.)
SSF8N60 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous Drain Current,VGS@10V
ID@Tc=100Cْ Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC
Power Dissipation
Linear derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
–55 to +150
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθCS
Case-to-Sink,Flat,Greased Surface
RθJA
Junction-to-Ambient
Min.
Typ.
0.50
Max.
0.86
62.5
www.goodark.com
Page 1 of 7
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Units
ْC/W
Rev.2.1

1 page




SSF8N60 pdf
Test Circuit and Waveform
SSF8N60
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
www.goodark.com
Unclamped Inductive Switching Test Circuit & Waveform
Page 5 of 7
Rev.2.1

5 Page










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