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PDF MBR10100-M3 Data sheet ( Hoja de datos )

Número de pieza MBR10100-M3
Descripción High Voltage Trench MOS Barrier Schottky Rectifier
Fabricantes Vishay 
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No Preview Available ! MBR10100-M3 Hoja de datos, Descripción, Manual

www.vishay.com
MBR1090-M3, MBR10100-M3
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
TO-220AC
PIN 1
PIN 2
2
1
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
10 A
90 V, 100 V
150 A
0.65 V
150 °C
TO-220AC
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
MBR1090
90
90
90
MBR10100
100
100
100
10
150
10 000
-65 to +150
UNIT
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
Maximum reverse current per diode
at working peak reverse voltage
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 100 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
Revision: 10-May-16
1 Document Number: 89193
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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