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IRF7494PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7494PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7494PbF fiche technique
Applications
l High frequency DC-DC converters
l Lead-Free
PD - 95349C
IRF7494PbF
VDSS
150V
HEXFET® Power MOSFET
RDS(on) max
ID
44m@VGS = 10V 5.1A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
iRθJL Junction-to-Drain Lead
eRθJA Junction-to-Ambient (PCB Mount)
Max.
150
± 20
5.1
4.0
40
2.5
0.02
33
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through ‡ are on page 8
www.irf.com
1
10/15/09

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