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NTB22N06L fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTB22N06L
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTB22N06L fiche technique
NTP22N06L, NTB22N06L
Power MOSFET
22 Amps, 60 Volts, Logic Level
NChannel TO220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
DraintoGate Voltage (RGS = 10 MΩ)
GatetoSource Voltage
Continuous
NonRepetitive (tpv10 ms)
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
VDGR
60
60
VGS "10
VGS "20
ID
ID
IDM
PD
TJ, Tstg
22
10
66
60
0.4
55 to
+175
Single Pulse DraintoSource Avalanche
EAS 72
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 12 A, VDS = 60 Vdc, RG = 25 Ω)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RθJC
RθJA
2.5
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
22 AMPERES
60 VOLTS
RDS(on) = 65 mΩ
NChannel
D
G
4
S
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06L
LLYWW
1
Gate
3
Source
NTx22N06L
LLYWW
1
Gate
2
Drain
3
Source
2
Drain
NTx22N06L = Device Code
x = P or B
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06L
TO220AB
50 Units/Rail
NTB22N06L
D2PAK
50 Units/Rail
NTB22N06LT4
D2PAK
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
NTP22N06L/D

PagesPages 7
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