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Número de pieza | NTB22N06 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTB22N06 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
VDS = 60 Vdc, IL(pk) = 12 A, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RθJC
RθJA
TL
Value
60
60
"20
"30
22
10
66
60
0.4
− 55
to
+175
72
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
22 AMPERES
60 VOLTS
RDS(on) = 60 mΩ
N−Channel
D
G
4
S
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06
LLYWW
1
Gate
3
Source
NTx22N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx22N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06
TO−220AB
50 Units/Rail
NTB22N06
D2PAK
50 Units/Rail
NTB22N06T4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP22N06/D
1 page NTP22N06, NTB22N06
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.01 0.02
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
t2
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
1
10
t, TIME (μs)
Figure 13. Thermal Response
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NTB22N06.PDF ] |
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