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ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVMFD5853NWF
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NVMFD5853NWF fiche technique
NVMFD5853N,
NVMFD5853NWF
Power MOSFET
40 V, 10 mW, 53 A, Dual NChannel, Dual
SO8FL
Features
Small Footprint (5x6 mm) for Compact Designs
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFD5853NWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
This is a PbFree and HalogenFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r(NenotteRsqJ1C, 2, 3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
r(NenotteRsqJ1A, 2 & 3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
53
37
58
29
12
8.7
3.1
1.6
165
55 to
175
Unit
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 53 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, IL(pk) = 28.3 A, L = 0.1 mH)
EAS
40 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Note 2)
RqJC
2.6 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
10 mW @ 10 V
ID MAX
53 A
Dual NChannel
D1
D2
G1 G2
S1 S2
1
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
D1 D1
S1 D1
G1 5853xx D1
S2 AYWZZ D2
G2 D2
D2 D2
5853N = NVMFD5853N
5853WF = NVMFD5853NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
NVMFD5853NT1G
DFN8 1500 / Tape &
(PbFree)
Reel
NVMFD5853NWFT1G DFN8 1500 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 0
1
Publication Order Number:
NVMFD5853N/D

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