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PDF NVMFS6B03NL Data sheet ( Hoja de datos )
| Número de pieza | NVMFS6B03NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS6B03NL
Advance Information
Power MOSFET
100 V, 4.8 mW, 145 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 2,
3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
rent RqJA (Notes 1, 2,
3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
100
±16
145
102
198
99
20
14
3.9
2.0
520
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 160 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 60 A, L = 0.1 mH, RG = 25 W)
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
4.8 mW @ 10 V
ID MAX
145 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. P0
1
Publication Order Number:
NVMFS6B03NL/D
1 page  
NVMFS6B03NL
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
20
0
0
100
25°C
10
100°C
20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 12. GFS vs. ID
1
100E−6
1E−3
TAV, TIME IN AVALANCHE (sec)
Figure 13. IPEAK vs. TAV
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
0.01 Single Pulse
0.001
0.000001 0.00001
0.0001
NTMFS6B03NL, 650 mm2, 2 oz, Cu Single Layer
Pad
0.001
0.01
0.1
PULSE TIME (sec)
Figure 14. Thermal Response
1
10 100
10E−3
1000
DEVICE ORDERING INFORMATION
Device
NVMFS6B03NLT1G
Marking
6B03NL
Package
DFN5
(Pb−Free)
Shipping†
1500 / Tape & Reel
NVMFS6B03NLWFT1G
6B03WF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS6B03NLT3G
6B03
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS6B03NLWFT3G
6B03WF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
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