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SCH1345 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence SCH1345
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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SCH1345 fiche technique
SCH1345
Power MOSFET
–20V, 49m, –4.5A, Single P-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
Low On-Resistance
1.5V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Load Switch
LCD Drive Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID 4.5 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
18 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
1W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
125 °C/W
www.onsemi.com
VDSS
20V
RDS(on) Max
49m@ 4.5V
64m@ 2.5V
85m@ 1.8V
120m@ 1.5V
ID Max
4.5A
ELECTRICAL CONNECTION
P-Channel
1, 2, 5, 6
1 : Drain
2 : Drain
3 3 : Gate
4 : Source
5 : Drain
6 : Drain
4
PACKING TYPE : TL
MARKING
YW
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
November 2015 - Rev. 2
1
Publication Order Number :
SCH1345/D

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