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What is EMB20N03V?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "N-Channel Logic Level Enhancement Mode Field Effect Transistor".


EMB20N03V Datasheet PDF - Excelliance MOS

Part Number EMB20N03V
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturers Excelliance MOS　
Logo Excelliance MOS Logo　


There is a preview and EMB20N03V download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB20N03V datasheet, circuit

 
 
N‐Channel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
20mΩ 
ID  12A  G
 
UIS, Rg 100% Tested 
S
Pb‐Free Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
Gate‐Source Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=8A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
PD 
Tj, Tstg 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
Junction‐to‐Case 
RJC 
Junction‐to‐Ambient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1％ 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
2013/8/17 
 
 
EMB20N03V
LIMITS 
±20 
12 
9 
48 
8 
3.2 
1.6 
21 
8.3 
2.5 
1 
‐55 to 150 
UNIT 
V 
A 
mJ 
W 
W 
°C 
MAXIMUM 
6 
50 
UNIT 
°C / W 
p.1 

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EMB20N03V equivalent
  EMB20N03V
 
 
 
  10
I D  = 8A
 
8
 
Gate Charge Characteristics
VD  S   = 5V
10V
15V
 6
 4
 
 2
 0
0
 
4 8 12
Q g  ‐ Gate Charge( nC )
16
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD  S ‐ Drain‐Source Voltage( V )
30
  Maximum Safe Operating Area
100
 
  10 R D S  (O  N  ) Limit
100μs
1ms
  10ms
 1
100ms
1s
 
  0.1
  VG  S = 10V
Single Pulse
  R  J  A = 50°C/W
  T A  = 25°C
10s
DC
  0.01
0.1
 
1 10
VD  S  ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 50°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
 
 
1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
  0.1
0.1
0.05
 
0.02
  0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J  A = 50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
2013/8/17 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB20N03V electronic component.


Information Total 5 Pages
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