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PDF MJF6107 Data sheet ( Hoja de datos )
| Número de pieza | MJF6107 | |
| Descripción | Power Transistor | |
| Fabricantes | ON Semiconductor | |
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ON Semiconductort
Power Transistor
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
• Electrically Similar to the Popular 2N6107
• 70 VCEO(sus)
• 7 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High Current Gain–Bandwidth Product
fT = 4 MHz (Min) Ca, IC
= 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
MJF6107
PNP SILICON
POWER TRANSISTOR
7 AMPERES
70 VOLTS
34 WATTS
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%,
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
Test No. 1 Per Fig. 13
Test No. 2 Per Fig. 14
Test No. 3 Per Fig. 15
VCEO
VCB
VEB
VISOL
IC
70
80
5
4500
3500
1500
7
10
Vdc
Vdc
Vdc
VRMS
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 3 Adc
PD 34 Watts
0.27 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD 2 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
RθJC
3.7 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
TL 260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted
on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 3
1
Publication Order Number:
MJF6107/D
1 page  
MJF6107
2
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4 V
0.4
0
0.07 0.1
VCE(sat) = IC/IB = 10
0.2 0.3 0.5 1 2
IC, COLLECTOR CURRENT (AMP)
3
Figure 9. “On” Voltages
57
+ā2.5
+ā2 *APPLIES FOR IC/IB < hFE/4
+ā1.5
+ā1
+ā0.5
*θVC FOR VCE(sat)
0
-ā0.5
+ā25°C to +150°C
-ā55°C to +ā25°C
-ā1 +ā25°C to +150°C
-ā1.5 θVB FOR VBE
-ā2
-ā55°C to +ā25°C
-ā2.5
0.07 0.1
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
5
Figure 10. Temperature Coefficients
7
103
VCE = 30 V
102
101
TJ = 150°C
100°C 25°C
100
10-1
REVERSE
10-2
IC = ICES
FORWARD
10-3
- 0.3 - 0.2 - 0.1 0 +ā0.1 +ā0.2 +ā0.3 +ā0.4 +ā0.5 +ā0.6 +ā0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut–Off Region
10 M
1M
100 k
10 k
IC = 10 x ICES
VCE = 30 V
IC = 2 x ICES
IC = ICES
1 k (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 11)
0.1 k
20
40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
160
Figure 12. Effects of Base–Emitter Resistance
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJF6107.PDF ] | |
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