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PDF MMPQ3725 Data sheet ( Hoja de datos )
| Número de pieza | MMPQ3725 | |
| Descripción | Quad Core Driver Transistor | |
| Fabricantes | ON Semiconductor | |
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MMPQ3725
Quad Core Driver
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Emitter −Base Voltage
Collector Current —
Continuous
Operating and Storage
Junction Temperature
Range
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Power Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature
Range
Symbol
VCEO
VCES
VEB
IC
TJ, Tstg
Value
40
60
5.0
1.0
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
°C
PD
PD
TJ, Tstg
Each
Transistor
Four
Transistors
Equal
Power
0.6 1.4
4.8 11.2
1.0 2.5
8.0 2.0
−55 to +150
W
mW/°C
W
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter
Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Vdc
40 — —
Collector −Base
Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter −Base
Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
V(BR)CES
Vdc
60 — —
V(BR)EBO
5.0
—
Vdc
—
ICBO
mAdc
— — 0.5
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
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CASE 751B−05, STYLE 4
SO−16
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2 15
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5 12
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89
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MMPQ3725/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMPQ3725.PDF ] | |
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