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Datasheet PJA3417-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


PJA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJA138K50V N-Channel Enhancement Mode MOSFET

PPJA138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features      50 V Current 500mA SOT-23 Unit : inch(mm) RDS(ON) , VGS@10V, ID@500mA<1.6Ω RDS(ON) , [email protected], ID@200mA<2.5Ω RDS(ON) , [email protected], ID@100mA<4.5Ω Advanced Trench Process Technology Speciall
Pan Jit International
Pan Jit International		mosfet
2PJA138LN-Channel Enhancement Mode MOSFET

PPJA138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@250mA<4.2Ω  RDS(ON) , [email protected], ID@100mA<5Ω  RDS(ON) , [email protected], ID@50mA<7Ω  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver,
Pan Jit International
Pan Jit International		mosfet
3PJA3400N-Channel Enhancement Mode MOSFET

PPJA3400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.9A Features  RDS(ON) , VGS@10V, [email protected]<38mΩ  RDS(ON) , [email protected], [email protected]<44mΩA  RDS(ON) , [email protected], [email protected]<60mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application,
Pan Jit International
Pan Jit International		mosfet
4PJA3401P-Channel Enhancement Mode MOSFET

PPJA3401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.6A Features  RDS(ON) , VGS@-10V, [email protected]<72mΩ  RDS(ON) , [email protected], [email protected]<82mΩ  RDS(ON) , [email protected], [email protected]<115mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Appl
Pan Jit International
Pan Jit International		mosfet
5PJA3402N-Channel Enhancement Mode MOSFET

PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.4A Features  RDS(ON) , VGS@10V, [email protected]<48mΩ  RDS(ON) , [email protected], [email protected]<53mΩ  RDS(ON) , [email protected], [email protected]<66mΩ  RDS(ON) , [email protected], [email protected]<92mΩ  Advanced Trench Process Technology  Specially Des
Pan Jit International
Pan Jit International		mosfet
6PJA3403P-Channel Enhancement Mode MOSFET

PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.1A Features  RDS(ON) , VGS@-10V, [email protected]<98mΩ  RDS(ON) , [email protected], [email protected]<114mΩ  RDS(ON) , [email protected], [email protected]<165mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM App
Pan Jit International
Pan Jit International		mosfet
7PJA3404N-Channel Enhancement Mode MOSFET

PPJA3404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 5.6A Features  RDS(ON) , VGS@10V, [email protected]<30mΩ  RDS(ON) , [email protected], [email protected]<45mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with
Pan Jit International
Pan Jit International		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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