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Pan Jit International - 60V N-Channel Enhancement Mode MOSFET

Numéro de référence PJE138L
Description 60V N-Channel Enhancement Mode MOSFET
Fabricant Pan Jit International 
Logo Pan Jit International 





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PJE138L fiche technique
PPJE138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4.2
RDS(ON) , VGS@4.5V, ID@100mA<5
RDS(ON) , VGS@2.5V, ID@50mA<7
Advanced Trench Process Technology
ESD Protected
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Marking: E8L
SOT-523
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
60
+20
160
800
223
1.8
-55~150
560
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
March 27,2015-REV.01 `
Page 1

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