PDF PMBT3946VPN Data sheet ( Hoja de datos )

Número de pieza	PMBT3946VPN
Descripción	200mA NPN/PNP switching transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 — 31 August 2009 Product data sheet 1. Product proﬁle 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and ﬂat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PMBT3946VPN SOT666 JEITA - NPN/NPN complement PMBT3904VS PNP/PNP complement PMBT3906VS 1.2 Features I Double general-purpose switching transistor I Board-space reduction I Ultra small and ﬂat lead SMD plastic package 1.3 Applications I General-purpose switching and ampliﬁcation 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current TR1 (NPN) open base - - 40 V - - 200 mA hFE DC current gain TR2 (PNP) VCE = 1 V; IC = 10 mA 100 180 300 hFE DC current gain VCE = −1 V; IC = −10 mA 100 180 300 1 page NXP Semiconductors PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions td delay time tr rise time ton turn-on time VCC = 3 V; IC = 10 mA; IBon = 1 mA; IBoff = −1 mA ts storage time tf fall time toff turn-off time Cc collector capacitance VCB = 5 V; IE = ie = 0 A; f = 1 MHz Ce emitter capacitance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz NF noise ﬁgure VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f = 10 Hz to 15.7 kHz TR2 (PNP) ICBO collector-base cut-off VCB = −30 V; IE = 0 A current IEBO emitter-base cut-off VEB = −6 V; IC = 0 A current hFE VCEsat VBEsat td tr ton ts tf toff Cc DC current gain collector-emitter saturation voltage base-emitter saturation voltage delay time rise time turn-on time storage time VCE = −1 V IC = −0.1 mA IC = −1 mA IC = −10 mA IC = −50 mA IC = −100 mA IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA VCC = −3 V; IC = −10 mA; IBon = −1 mA; IBoff = 1 mA fall time turn-off time collector capacitance VCB = −5 V; IE = ie = 0 A; f = 1 MHz Min Typ Max Unit - - 35 ns - - 35 ns - - 70 ns - - 200 ns - - 50 ns - - 250 ns - - 4 pF - - 8 pF 300 - - MHz - - 5 dB - - −50 nA - - −50 nA 60 180 - 80 180 - 100 180 300 60 130 - 30 50 - - −100 −250 mV - −165 −400 mV - −750 −850 mV - −850 −950 mV - - 35 ns - - 35 ns - - 70 ns - - 225 ns - - 75 ns - - 300 ns - - 4.5 pF PMBT3946VPN_1 Product data sheet Rev. 01 — 31 August 2009 © NXP B.V. 2009. All rights reserved. 5 of 15 5 Page NXP Semiconductors 9. Package outline PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor 1.7 1.5 65 1.7 1.3 1.5 1.1 pin 1 index 0.6 0.5 4 0.3 0.1 12 0.5 1 Dimensions in mm Fig 15. Package outline SOT666 3 0.27 0.17 0.18 0.08 04-11-08 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PMBT3946VPN SOT666 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel Packing quantity 4 000 8 000 - -315 -115 - [1] For further information and the availability of packing methods, see Section 14. PMBT3946VPN_1 Product data sheet Rev. 01 — 31 August 2009 © NXP B.V. 2009. All rights reserved. 11 of 15 11 Page

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