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General Semiconductor - Glass Passivated Single-Phase Bridge Rectifier

Numéro de référence G3SBA80
Description Glass Passivated Single-Phase Bridge Rectifier
Fabricant General Semiconductor 
Logo General Semiconductor 





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G3SBA80 fiche technique
G3SBA20 and G3SBA80
Case Type GBU
Glass Passivated Single-Phase
New Product Bridge Rectifier
Reverse Voltage 200 and 800 V
Forward Current 4.0 A
Features
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9)R.
0.125 (3.2) x 45o
CHAMFER
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
0.043 (1.1)
0.035 (0.9)
0.710 (18.0)
0.690 (17.5)
0.140 (3.56)
0.130 (3.30)
9o
TYP.
5o
TYP.
0.085 (2.16)
0.075 (1.90)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
Polarity shown on front side of case, positive lead by beveled corner
Lead forming option with 10mm-7.5mm spacing is available.
Dimensions in inches and (millimeters)
0.022 (0.56)
0.018 (0.46)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mounting Position: Any(3)
Mounting Torque: 5 in-lbs max.
Weight: 0.15oz., 4.0g
Packaging codes/options:
1/400 ea. per Bulk Tray Stack
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol G3SBA20 G3SBA60 G3SBA80
Unit
Maximum repetitive peak reverse voltage
VRRM
200
600
800
V
Maximum RMS voltage
VRMS
140
420
560
V
Maximum DC blocking voltage
VDC 200 600 800
V
Maximum average forward
rectified output current at
TC = 100OC(1)
TA = 25OC (2)
IF(AV)
4.0
2.3
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
80
A
Rating for fusing (t < 8.3ms)
I2t 32 A2sec
Typical thermal resistance per leg
RθJA
RθJC
26 (1)
5.0 (2)
°C/W
Operating junction storage and temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol G3SBA20 G3SBA60
Maximum instantaneous forward voltage
drop per leg at 2.0 A
VF
1.00
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25°C
TA = 125°C
IR
5.0
400
G3SBA80
Unit
V
µA
Notes: (1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
3/14/01

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