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Número de pieza | SSF6010 | |
Descripción | 60V N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF6010 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SSF6010
60V N-Channel MOSFET
FEATURES
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =64A
BV=60V
RDS(ON)=11mΩ (typ.)
DESCRIPTION
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6010 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM Pulsed drain current ①
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS
EAS
EAR
TJ
TSTG
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
64
45
300
144
0.74
±20
220
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
—
—
Typ.
1.04
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 — — V
RDS(on) Static Drain-to-Source on-resistance — 11 13 mΩ
VGS(th) Gate threshold voltage
2.0 4.0 V
gfs Forward transconductance
— 58 — S
—— 2
IDSS Drain-to-Source leakage current
μA
— — 10
Gate-to-Source forward leakage
IGSS
Gate-to-Source reverse leakage
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— — 100
— — -100
Page 1 of 5
nA
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=60V,VGS=0V
VDS=60V,
VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
Rev.2.4
1 page TO-220 MECHANICAL DATA
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
SSF6010
60V N-Channel MOSFET
A
D
D1
b
ФP
ФP1
b1
ϴ1
ϴ2
L
D2
ϴ
A1 ϴ4
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
e
Dimension In Millimeters
Min Nom Max
- 1.300
-
2.200
2.400
2.600
- 1.270
-
1.270
1.370
1.470
- 0.500
-
- 15.600
-
- 28.700
-
- 9.150
-
9.900
10.000
10.100
- 10.160
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 -
- 70 -
- 30 -
- 30 -
cE
Dimension In Inches
Min Nom Max
- 0.051
-
0.087
0.094
0.102
- 0.050
-
0.050
0.054
0.058
- 0.020
-
- 0.614
-
- 1.130
-
- 0.360
-
0.390
0.394
0.398
- 0.400
-
- 0.142
-
0.059
0.1BSC
0.508
0.516
0.524
- 70 -
- 70 -
50 70 90
10 30 50
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Page 5 of 5
Rev.2.4
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSF6010.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF6010 | Power switching application | Silikron Semiconductor Co |
SSF6010 | 60V N-Channel MOSFET | GOOD-ARK |
SSF6010A | 60V N-Channel MOSFET | GOOD-ARK |
SSF6010A | MOSFET ( Transistor ) | Silikron Semiconductor |
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