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SSF6092G1 fiches techniques PDF

GOOD-ARK - 60V N-Channel MOSFET

Numéro de référence SSF6092G1
Description 60V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF6092G1 fiche technique
Main Product Characteristics
VDSS
RDS(on)
ID
60V
70mΩ(typ)
2.7A
SOT-23
SSF6092G1
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
2.7
10.8
1.25
0.01
60
± 20
-55 to + 150
Units
A
W
W/°C
V
V
°C
www.goodark.com
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