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GOOD-ARK - 68V N-Channel MOSFET

Numéro de référence SSF6808
Description 68V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF6808 fiche technique
SSF6808
68V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 6mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =84A
BV=68V
R DS (ON) =8mohm
DESCRIPTION
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device
reliability and electrical parameter repeatability. SSF6808 is
assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6808 Top View (TO-220)
Absolute Maximum Ratings
Parameter
I DB
@T
B
B
c
=25ْ
B
C
Continuous drain current,VGS@10V
I
B
D
@T cB B
=100Cْ
B
Continuous drain current,VGS@10V
IDMB B Pulsed drain current
Power dissipation
P
B
D
@T CB B
=25ْC
B
Linear derating factor
V GSB B
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
E ASB B
E ARB B
T JB B
T STGB B
Single pulse avalanche energy
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
84
76
310
181
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R θJCB B
R θJAB B
Junction-to-case
Junction-to-ambient
Min.
Typ.
0.83
Max.
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV DSSB B
RBDS(on)B
VBGS(th)B
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
68 —
—5
2.0 —
——
IDSSB B Drain-to-Source leakage current
——
Max. Units
—V
8 mΩ
4.0 V
2
μA
10
Gate-to-Source forward leakage
I GSSB B
Gate-to-Source reverse leakage
— — 100
nA
— — -100
www.goodark.com
Page 1 of 5
Test Conditions
VGSB B=0V,IBDB=250μA
V
B
GSB=10V,I
B
DB=30A
V
B
D
SB=V
,IGSB B
DB
=250μA
B
VDB SB=68V,VBGSB=0V
VDB SB=68V,
VBGSB=0V,TBJB=150ْC
VGSB B=20V
V
B
GSB=-20V
Rev.2.4

PagesPages 5
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