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PDF MJE16204 Data sheet ( Hoja de datos )
| Número de pieza | MJE16204 | |
| Descripción | NPN Bipolar Power Deflection Transistor | |
| Fabricantes | ON Semiconductor | |
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ON Semiconductort
SCANSWITCH™
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution
Monitors
The MJE16204 is a state–of–the–art SWITCHMODE™ bipolar
power transistor. It is specifically designed for use in horizontal
deflection circuits for 20 mm diameter neck, high and very resolution,
full page, monochrome monitors.
• 550 Volt Collector–Base Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Isolated or Non–Isolated TO–220 Type Packages
• Fast Switching:
65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
• Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
• Low Collector–Emitter Leakage Current —
100 µA Max at 550 Volts — VCES
• High Emitter–Base Breakdown Capability For High Voltage Off Drive
Circuits — 9.0 Volts (Min)
• Case 221D is UL Recognized at 3500 VRMS: File #E69369
MJE16204
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS — VCES
45 AND 80 WATTS
CASE 221A–09
TO–220AB
MJE16204
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
1
Publication Order Number:
MJE16204D
1 page  
MJE16204
SAFE OPERATING AREA
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
3
MJE16204
10 µs
TC = 25°C
d 1Ăms
c
SECONDARY BREAKĆ
DOWN
WIREBOND LIMIT
THERMAL LIMIT
5 7 10
20 30 50 70 100 200 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Forward Biased
Safe Operating Area
7
6
5 VBE(off) = 5 V
4
3 VBE(off) = 0 V
2 IC/IB1 ≥ 5
TJ ≤
1 100°C
0
50 150 250 350 450 550
VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Maximum Reverse Biased
Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base–to–emitter junction reverse biased. Under
these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This
can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc.
1
SECOND BREAKĆ
0.8 DOWN DERATING
0.6
THERMAL
0.4 DERATING
0.2
0
2 40 60 80 100 120 140 160
0 TC, CASE TEMPERATURE (°C)
Figure 9. Power Derating
The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the
voltage–current condition allowable during reverse biased
turnoff. This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
Figure 8 gives the RBSOA characteristics.
http://onsemi.com
5
5 Page 
Notes
MJE16204
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MJE16204.PDF ] | |
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