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PDF MUN5313DW1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5313DW1 | |
| Descripción | Complementary Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5313DW1,
SMUN5313DW1,
NSBC144EPDXV6,
NSBC144EPDP6
Complementary Bias
Resistor Transistors
R1 = 47 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5313DW1T1G,
SMUN5313DW1T1G
SOT−363
3,000/Tape & Reel
SMUN5313DW1T3G
SOT−363 10,000/Tape & Reel
NSBC144EPDXV6T1G
NSVB144EPDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC144EPDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC144EPDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
13 M G
G
1
SOT−563
CASE 463A
13 M G
G
1
SOT−963
CASE 527AD
MG
1G
13/K
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTC144EP/D
1 page  
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5313DW1, NSBC144EPDXV6
1
IC/IB = 10
0.1
TA = −25°C
25°C
75°C
1000
100
TA = 75°C
25°C
−25°C
0.01
0
10
9
8
7
6
5
4
3
2
1
0
0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
40 101
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
f = 10 kHz
lE = 0 A
TA = 25°C
100
10
1
TA = 75°C
25°C
−25°C
0.1
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
0.01
0.001
50 0
12
VO = 5 V
34 5 67
Vin, INPUT VOLTAGE (V)
8
9 10
Figure 10. Output Current vs. Input Voltage
100
VO = 2 V
TA = −25°C
25°C
10 75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage vs. Output Current
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MUN5313DW1.PDF ] | |
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