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PDF NSBC114TPDXV6 Data sheet ( Hoja de datos )
| Número de pieza | NSBC114TPDXV6 | |
| Descripción | Complementary Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5315DW1,
NSBC114TPDXV6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 8 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
−NPN
−PNP
VIN(rev)
6
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5315DW1T1G,
SMUN5315DW1T1G
SOT−363
3,000 / Tape & Reel
NSBC114TPDXV6T1G
SOT−563
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
15 M G
G
1
SOT−363
CASE 419B
15 M G
1G
SOT−563
CASE 463A
15 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTC114TP/D
1 page  
MUN5315DW1, NSBC114TPDXV6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5315DW1, NSBC114TPDXV6
1
IC/IB = 10
1000
75°C
0.1
−25°C 25°C
0.01
75°C
TA = −25°C
100
10
25°C
VCE = 10 V
0.001
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
1
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
10 100
9
f = 10 kHz
75°C
8
7
lE = 0 A
TA = 25°C
10
25°C
61
5
4 0.1 TA = −25°C
3
2 0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
10
VO = 0.2 V
TA = −25°C
1
75°C
25°C
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
50
http://onsemi.com
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