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PDF NSBC123EPDXV6 Data sheet ( Hoja de datos )
| Número de pieza | NSBC123EPDXV6 | |
| Descripción | Complementary Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5331DW1,
NSBC123EPDXV6
Complementary Bias
Resistor Transistors
R1 = 2.2 kW, R2 = 2.2 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5331DW1T1G
SOT−363 3,000 / Tape & Reel
NSVMUN5331DW1T1G*
SOT−363 3,000 / Tape & Reel
NSBC123EPDXV6T1G
SOT−563 4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
31 M G
G
1
SOT−563
CASE 463A
31 M G
G
1
31 = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
DTC123EP/D
1 page  
MUN5331DW1, NSBC123EPDXV6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5331DW1, NSBC123EPDXV6
1
IC/IB = 10
0.1
0.01
0
150°C
25°C
−55°C
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
1000
100
10
1
0.1
50 0.1
150°C
25°C
−55°C
VCE = 10 V
1 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
10 100
9 f = 10 kHz
8
IE = 0 A
150°C
25°C
−55°C
TA = 25°C
7
10
6
5
4
1
3
2
1 VO = 5 V
0 0.1
0 10 20 30 40 50
0
1
2
3
4
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10 25°C
−55°C
1
150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
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| PDF Descargar | [ Datasheet NSBC123EPDXV6.PDF ] | |
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