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PDF NYC222 Data sheet ( Hoja de datos )
| Número de pieza | NYC222 | |
| Descripción | Sensitive Gate Silicon Controlled Rectifiers | |
| Fabricantes | ON Semiconductor | |
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NYC222, NYC226, NYC228
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
• Blocking Voltage to 600 V
• High Surge Current − 15 A
• Very Low Forward “On” Voltage at High Current
• Low-Cost Surface Mount SOT−223 Package
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open)
NYC222
NYC226
NYC228
VDRM,
VRRM
50
400
600
V
On-State Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
A
Average On−State Current,
(TC = 65°C, f = 60 Hz, Time = 1 sec)
IT(RMS)
2.0
A
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
15 A
0.9 A2s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TA = 25°C)
PGM 0.5 W
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
PG(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TA = 25°C)
IFGM 0.2 A
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, TA = 25°C)
Operating Junction Temperature Range
@ Rated VRRM and VDRM
VRGM
5.0
V
TJ −40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 1
1
www.onsemi.com
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
G
AK
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 11
1
AYW
22xSTG
G
A
Y
W
22xST
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
x = 2, 6 or 8
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 K (Cathode)
2 A (Anode)
3 G (Gate)
4 A (Anode)
ORDERING INFORMATION
Device
NYC222STT1G
Package
SOT−223
(Pb−Free)
Shipping†
1000 /Tape & Reel
NYC226STT1G SOT−223 1000 /Tape & Reel
(Pb−Free)
NYC228STT1G SOT−223 1000 /Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NYC222/D
1 page  
NYC222, NYC226, NYC228
PACKAGE DIMENSIONS
D
b1
4
HE
1 23
e1
e
0.08 (0003)
A1
E
b
A
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN
NOM MAX
A 1.50
1.63
1.75
A1 0.02
0.06
0.10
b 0.60 0.75 0.89
b1 2.90
3.06
3.20
c 0.24 0.29 0.35
D 6.30
6.50
6.70
E 3.30
3.50
3.70
e 2.20 2.30 2.40
e1 0.85
0.94
1.05
L 0.20 −−− −−−
C
L1 1.50
1.75
2.00
q
H E 6.70
7.00
7.30
q 0°
− 10°
L L1
SOLDERING FOOTPRINT
3.8
0.15
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
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5
NYC222/D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NYC222.PDF ] | |
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