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SB007-03C fiches techniques PDF

ON Semiconductor - Schottky Barrier Diode

Numéro de référence SB007-03C
Description Schottky Barrier Diode
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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SB007-03C fiche technique
Ordering number : ENA0405B
SB007-03C
Schottky Barrier Diode
30V, 70mA, Low IR, Single CP
http://onsemi.com
Applications
High frequency rectication (switching regulators, converters, choppers)
Features
Low forward voltage (VF max=0.55V)
Fast reverse recovery time (trr max=10ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
Storage Temperature
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
30
35
70
2
--55 to +125
--55 to +125
Unit
V
V
mA
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-004
2.9 0.1 SB007-03C-TB-E
3
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Marking
1
0.95
2
0.4
1 : Anode
2 : No Contact
3 : Cathode
CP
TB
Electrical Connection
3
G
12
Semiconductor Components Industries, LLC, 2013
September, 2013
71112 TKIM/13107 TIIM TC-00000490 / 71206 / 42506SB MSIM TA-100466 No.A0405-1/5

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