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Numéro de référence | UPA2719AGR | ||
Description | P-CHANNEL POWER MOS FET | ||
Fabricant | Renesas | ||
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1 Page
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2719AGR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2719AGR is P-Channel MOS Field Effect
Transistor designed for power management applications of
notebook computers and Lithium-Ion battery protection
circuit.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A)
RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
• Low input capacitance
Ciss = 2010 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation Note3
ID(DC)
ID(pulse)
PT1
PT2
m10
m100
2
2
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note4
Single Avalanche Energy Note4
Tstg −55 to +150 °C
IAS −10 A
EAS 10 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19281EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
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Pages | Pages 7 | ||
Télécharger | [ UPA2719AGR ] |
No | Description détaillée | Fabricant |
UPA2719AGR | P-CHANNEL POWER MOS FET | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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