|
|
Número de pieza | K4S280832O | |
Descripción | 128Mb O-die SDRAM | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K4S280832O (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! Rev. 1.0, May. 2010
K4S280832O
K4S281632O
128Mb O-die SDRAM
54TSOP(II) with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
1 page K4S280832O
K4S281632O
datasheet
4. PACKAGE PHYSICAL DIMENSION
#54 #28
Rev. 1.0
SDRAM
Unit : mm
#1
(1.50)
(R 0.15)
22.22 ± 0.10
(0.71)
0.80TYP
[0.80 ± 0.08]
Detail A
#27
(10°)
Detail B
(10°)
0.125
+0.075
- 0.035
0.10 MAX
[ 0.075 MAX
NOTE :
1. ( ) IS REFERENCE
2. [ ] IS ASS’Y OUT QUALITY
Detail A
Detail B
0.30
+0.10
- 0.05
0.35
+0.10
- 0.05
Figure 1. 54Pin TSOP(II) Package Dimension
0.25TYP
(0° ∼ 8°)
-5-
5 Page K4S280832O
K4S281632O
datasheet
13. AC OPERATING TEST CONDITIONS
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Figure 3
Rev. 1.0
SDRAM
(VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Unit
V
V
ns
V
Output
870Ω
3.3V
1200Ω
50pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Figure 2. DC output load circuit
Output
Z0 = 50Ω
Vtt = 1.4V
50Ω
50pF
Figure 3. AC output load circuit
- 11 -
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet K4S280832O.PDF ] |
Número de pieza | Descripción | Fabricantes |
K4S280832A | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S280832B | 128M-bit SDRAM | Samsung Electronics |
K4S280832C | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S280832E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |