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PDF SBE818 Data sheet ( Hoja de datos )
| Número de pieza | SBE818 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA1379A
SBE818
Schottky Barrier Diode
30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode
http://onsemi.com
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
• Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting
• Small switching noise
• Low forward voltage (IF=2.0A, VF max=0.62V)
• Low reverse current (VR=15V, IR max=7.5μA)
• Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage
VRRM
Nonrepetitive Peak Reverse Surge Voltage VRSM
Average Output Current
IO
When mounted on ceramic substrate, Rectangular wave 180°C
When mounted on glass epoxy substrate
Surge Forward Current
Junction Temperature
IFSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
Ratings
30
30
2.0
1.5
20
--55 to +125
--55 to +125
Unit
V
V
A
A
A
°C
°C
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),
and between Terminal 3 and Terminal 5 (or 6)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-004
0.2
8
5
0.125 SBE818-TL-E
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
SC
1
0.5
2.0
4
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
EMH8
TL Lot No.
Electrical Connection
8765
1234
*: Terminal 4 is used for the
purposes such as test. Al-
though it is connected to
Anode 2, please handle it
as NC Terminal.
Semiconductor Components Industries, LLC, 2013
September, 2013
71812 TKIM/D0308SB MSIM TC-00001737 No. A1379-1/6
1 page  
Outline Drawing
SBE818-TL-E
SBE818
Land Pattern Example
Mass (g) Unit
0.008
* For reference
mm
0.3
Unit: mm
0.5
No. A1379-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SBE818.PDF ] | |
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