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2SK3824 fiches techniques PDF

ON Semiconductor - N-Channel Silicon MOSFET

Numéro de référence 2SK3824
Description N-Channel Silicon MOSFET
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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2SK3824 fiche technique
2SK3824
Ordering number : ENN8230
2SK3824
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=50µH, IAV=60A
*2 L50µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3824
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=30A
ID=30A, VGS=10V
ID=30A, VGS=4V
Ratings
60
±20
60
240
1.75
60
150
--55 to +150
125
60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
60
1.2
24
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
40 S
11.5 15 m
16 22 m
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3824/D

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