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ON Semiconductor - General Purpose Transistors

Numéro de référence BCW69LT1
Description General Purpose Transistors
Fabricant ON Semiconductor 
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BCW69LT1 fiche technique
BCW69LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
Symbol
VCEO
VEBO
IC
Value
45
5.0
100
Unit
Vdc
Vdc
mAdc
Symbol
PD
RθJA
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
PD
RθJA
300 mW
2.4 mW/°C
417 °C/W
TJ, Tstg 55 to +150
°C
http://onsemi.com
3
1
2
CASE 318 08, STYLE 6
SOT23 (TO 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
CollectorEmitter Breakdown Voltage (IC = 100 μAdc, VEB = 0)
EmitterBase Breakdown Voltage (IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100°C)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Min
45
50
5.0
Max
100
10
Unit
Vdc
Vdc
Vdc
nAdc
μAdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
BCW69LT1/D

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