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ON Semiconductor - NPN SILICON POWER TRANSISTOR

Numéro de référence MJD13003
Description NPN SILICON POWER TRANSISTOR
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MJD13003 fiche technique
MJD13003
High Voltage
SWITCHMODET Series
DPAK For Surface Mount Applications
This device is designed for highvoltage, highspeed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
http://onsemi.com
switching regulators, inverters, motor controls, solenoid/relay drivers
and deflection circuits.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
NPN SILICON
POWER TRANSISTOR
1.5 AMPERES
Straight Lead Version in Plastic Sleeves (“1” Suffix)
400 VOLTS, 15 WATTS
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Reverse Biased SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . .
tc @ 1.0 A,
100_C is 290 ns (Typ)
CASE 369A13
700 V Blocking Capability
Switching and SOA Applications Information
Electrically Similar to the Popular MJE13003
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
Soldering Purposes
RθJC
RθJA
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Max Unit
8.33 _C/W
80 _C/W
260 _C
CASE 36907
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
(2) When surface mounted on minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MJD13003/D

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