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Numéro de référence | MJD13003 | ||
Description | NPN SILICON POWER TRANSISTOR | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
MJD13003
High Voltage
SWITCHMODET Series
DPAK For Surface Mount Applications
This device is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
http://onsemi.com
switching regulators, inverters, motor controls, solenoid/relay drivers
and deflection circuits.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
NPN SILICON
POWER TRANSISTOR
1.5 AMPERES
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
400 VOLTS, 15 WATTS
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Reverse Biased SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . .
tc @ 1.0 A,
100_C is 290 ns (Typ)
CASE 369A−13
• 700 V Blocking Capability
• Switching and SOA Applications Information
• Electrically Similar to the Popular MJE13003
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
Soldering Purposes
RθJC
RθJA
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
−65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Max Unit
8.33 _C/W
80 _C/W
260 _C
CASE 369−07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
(2) When surface mounted on minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MJD13003/D
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Pages | Pages 9 | ||
Télécharger | [ MJD13003 ] |
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