|
|
PDF MMBT5401W Data sheet ( Hoja de datos )
| Número de pieza | MMBT5401W | |
| Descripción | High Voltage Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBT5401W (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
MMBT5401W
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 2)
TA = 25°C
Derate Above 25°C
PD 400 mW
3.2 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
312 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 @ 100 mm2, 0.5 oz. copper traces, still air.
2. FR− 5 = 1.0 0.75 0.062 in.
−55 to +150
°C
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
4W MG
G
1
4W = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping†
MMBT5401WT1G,
SC−70 3000 / Tape &
NSVMMBT5401WT1G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1
Publication Order Number:
MMBT5401W/D
1 page  
MMBT5401W
1000
700 IC/IB = 10
500 TJ = 25°C
300
200
tr @ VCC = 120 V
tr @ VCC = 30 V
100
70
50
30
20
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 10. Turn−On Time
1000
VCE = 1 V
TA = 25°C
100
2000
1000 IC/IB = 10
700 TJ = 25°C
500
300 tf @ VCC = 30 V
tf @ VCC = 120 V
200
ts @ VCC = 120 V
100
70
50
30
20
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 11. Turn−Off Time
1
10 mSec
0.1
1 Sec
0.01
10
0.1
1
0.001
10 100 1
IC, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
10 100 1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
www.onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT5401W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBT5401 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |  TRSYS |
| MMBT5401 | HIGH VOLTAGE TRANSISTOR PNP SILICON |  Zowie Technology Corporation |
| MMBT5401 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |  Diodes Incorporated |
| MMBT5401 | PNP General Purpose Amplifier |  Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |