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PDF NCP1124 Data sheet ( Hoja de datos )
| Número de pieza | NCP1124 | |
| Descripción | High-Voltage Switcher | |
| Fabricantes | ON Semiconductor | |
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NCP1124, NCP1126,
NCP1129
High Voltage Switcher for
Offline Power Supplies
The NCP112x products integrates a fixed−frequency peak current
mode controller with a low on−resistance, 650 V MOSFET. Available
in a PDIP−7 package, the NCP112x offers a high level of integration,
including soft−start, frequency−jittering, short−circuit protection,
thermal shutdown protection, frequency foldback mode and
skip−cycle to reduce power consumption in light load condition, peak
current mode control with adjustable internal ramp compensation and
adjustable peak current set point.
During nominal load operation, the part switches at one of the
available frequencies (65 or 100 kHz). When the output power
demand diminishes, the IC automatically enters frequency foldback
mode and provides excellent efficiency at light loads. When the power
demand reduces further, it enters into a skip mode to reduce the
standby consumption down to no load condition.
Protection features include: a timer to detect an overload or a
short−circuit event with auto−recovery or latch protection, and a
built−in VCC overvoltage protection.
The switcher also provides a jittered 65 kHz or 100 kHz switching
frequency to improve the EMI.
Features
• Built−in 650 V, 1 A MOSFET with RDS(on) of 8.6 W for NCP1124
• Built−in 650 V, 1.8 A MOSFET with RDS(on) of 5.4 W for NCP1126
• Built−in 650 V, 5.5 A MOSFET with RDS(on) of 2.1 W for NCP1129
• Fixed−Frequency 65 or 100 kHz Current Mode Control with
Adjustable Internal Ramp Compensation
• Adjustable Current Limit with External Resistor
• Frequency Foldback Down to 26 kHz and Skip−Cycle for Light Load
Efficiency
• Frequency Jittering for EMI Improvement
• Less than 100 mW Standby Power @ High Line
• EPS 2.0 Compliant
• 7−Pin Package Provides Creepage Distance
• These are Pb−Free Devices
www.onsemi.com
PDIP−7
P SUFFIX
CASE 626B
MARKING DIAGRAMS
112xyPzzz
AWL
YYWWG
1
x = Specific Device Code
4 = NCP1124
6 = NCP1126
9 = NCP1129
y = A or B
A = Latch
B = Auto−recovery
zzz = Frequency
65 = 65 kHz
100 = 100 kHz
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of
this data sheet.
Table 1. OUTPUT POWER TABLE (Note 1)
230 Vac + 15% (Note 4)
85 − 265 Vac
Product
Adapter (Note 2)
Peak or Open Frame (Note 3)
Adapter (Note 2)
Peak or Open Frame (Note 3)
NCP1124
12 W
27 W
6W
14 W
NCP1126
15 W
32 W
10 W
17 W
NCP1129
28 W
43 W
20 W
26.5 W
1. 12 V output voltage with 135 V reflected output voltage
2. Typical continuous power in a non-ventilated enclosed adaptor measured at 50°C ambient temperature.
3. Maximum practical continuous power in an open-frame design at 50°C ambient temperature
4. 230 VAC or 115 VAC with voltage doubler.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 3
1
Publication Order Number:
NCP1126/D
1 page  
NCP1124, NCP1126, NCP1129
Table 5. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, for typical values TJ = 25_C, for min/max values, TJ is –40_C to 125_C, unless otherwise noted)
Characteristics
Conditions
Symbol Min Typ
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Operating Hysteresis
VCC Overvoltage Protection Threshold
VCC Overvoltage Protection Filter Delay
VCC Clamp Voltage in Latch Mode
Supply Current
Startup Current
Skip Current
Operating Current at 65 kHz
Operating Current at 100 kHz
Current Consumption in Latch Mode
POWER SWITCH CIRCUIT
VCC increasing
VCC decreasing
VCC(on) − VCC(off)
ICC = 500 mA
VCC = VCC(on) – 0.5 V
VFB = Vskip − 0.1 V
IFB = 50 mA, fSW = 65 kHz
IFB = 50 mA, fSW = 100 kHz
TJ = –40_C to 125_C
VCC(on)
VCC(off)
VCC(HYS)
VCC(OVP)
tOVP(delay)
VZENER
15.75
7.75
6.0
26.3
–
5
17
8.5
–
28
26
6.2
ICC1
ICC2
ICC3
ICC4
ICC(latch)
––
– 700
– 1900
– 3300
42 –
Off−State Leakage Current
TJ = 125_C, VDrain = 650 V
IDrain(off)
–
–
Breakdown Voltage
TJ = 25_C, IDrain = 250 mA, VFB = 0 V VBR(DSS)
650
–
ON State Resistance
NCP1129
NCP1126
NCP1124
IDrain = 100 mA
VCC = 10 V, TJ = 25_C
VCC = 10 V, TJ = 125_C
VCC = 10 V, TJ = 25_C
VCC = 10 V, TJ = 125_C
VCC = 10 V, TJ = 25_C
VCC = 10 V, TJ = 125_C
RDS(on)
− 2.1
−−
− 5.4
−−
− 9.0
−−
Output Capacitance
NCP1129
NCP1126
NCP1124
VDS = 25 V, VCC = 0 V, f = 1 MHz
VDS = 25 V, VCC = 0 V, f = 1 MHz
VDS = 25 V, VCC = 0 V, f = 1 MHz
COSS
– 67.3
− 29.2
− 16.5
Switching Characteristics
NCP1124
NCP1126
NCP1129
Rise Time
Fall Time
Rise Time
Fall Time
Rise Time
Fall Time
(VDS = 325 V, IDrain = 1 A,
VGS = 10 V, Rg = 4.7 W)
(VDS = 325 V, IDrain = 1.8 A,
VGS = 10 V, Rg = 4.7 W)
(VDS = 325 V, IDrain = 5.5 A,
VGS = 10 V, Rg = 4.7 W)
tr − 4.25
tf − 9.32
tr − 7.44
tf − 5.94
tr − 7.54
tf − 5.94
CURRENT SENSE
Current Sense Voltage Threshold
Cycle by Cycle Current Sense
Propagation Delay
NCP1129
NCP1126
NCP1124
VCS increasing, TJ = 25_C
VCS increasing
VCS dv/dt = 1 V/ms, measured from
VILIM1 to DRV falling edge
VILIM1
VILIM2
tCS(delay)
730
720
–
−
−
785
800
100
50
50
Cycle by Cycle Leading Edge Blanking
Duration
tCS(LEB) – 320
INTERNAL OSCILLATOR
Oscillation Frequency
Maximum Duty Ratio
Frequency Jittering in Percentage of fOSC
65 kHz Version
100 kHz Version
fOSC1
fOSC2
DMAX
fjitter
61 65
92 100
78 80
– ±5
Max
20
9.25
–
29.3
–
7.15
15
900
3100
4000
–
20
–
2.75
5.0
7.7
13.1
13.2
23.5
–
–
−
−
−
−
−
−
−
840
880
150
150
150
400
71
108
82
–
Unit
V
V
ms
V
mA
mA
mA
V
W
pF
ns
mV
ns
ns
kHz
%
%
www.onsemi.com
5
5 Page 
NCP1124, NCP1126, NCP1129
TYPICAL CHARACTERISTICS
780
760
740
720
700
680
660
640
−50 −25 0
25 50
75 100 125
TEMPERATURE (°C)
Figure 27. NCP1124 VBR(DSS) vs. Junction
Temperature
800
750
700
650
600
−50 −25 0
25 50
75 100 125
TEMPERATURE (°C)
Figure 29. NCP1126 VBR(DSS) vs. Junction
Temperature
800
750
700
650
600
550
500
−50 −25 0
25 50
75 100 125
TEMPERATURE (°C)
Figure 31. NCP1129 VBR(DSS) vs. Junction
Temperature
20
18
16
14
12
10
8
6
4
2
0
−50
−25 0
25 50
75 100 125
TEMPERATURE (°C)
Figure 28. NCP 1124 RDS(on) vs. Junction
Temperature
12
10
8
6
4
2
0
−50 −25 0
25 50
75 100 125
TEMPERATURE (°C)
Figure 30. NCP 1126 RDS(on) vs. Junction
Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−40 −25 0 25 85 100 125
TEMPERATURE (°C)
Figure 32. NCP 1129 RDS(on) vs. Junction
Temperature
www.onsemi.com
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet NCP1124.PDF ] | |
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