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Numéro de référence | CEB04N65 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP04N65
CEB04N65
CEF04N65
VDSS
650V
RDS(ON)
2.8Ω
ID
4A
@VGS
10V
650V 2.8Ω
4A
10V
650V 2.8Ω 4A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS 650
VGS ±30
ID
4
2.4
IDM e
16
104
PD 0.83
TO-220F
4d
2.4 d
16 d
35
0.28
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
220
4.2
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
62.5
3.6
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Oct
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEB04N65 ] |
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