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Numéro de référence | CEF06N7 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP06N7/CEB06N7
CEF06N7
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP06N7
CEB06N7
CEF06N7
VDSS
700V
700V
700V
RDS(ON)
2Ω
2Ω
2Ω
ID @VGS
6A 10V
6A 10V
6A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
6
4
24
150
1
6
4d
24 d
48
0.3
Single Pulsed Avalanche Energy h
EAS 125
Single Pulsed Avalanche Current h
IAS 5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
62.5
3.1
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.May
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEF06N7 ] |
No | Description détaillée | Fabricant |
CEF06N7 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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