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PDF CEP12N65 Data sheet ( Hoja de datos )
| Número de pieza | CEP12N65 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEP12N65 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP12N65
CEB12N65
CEF12N65
VDSS
650V
650V
650V
RDS(ON)
0.73Ω
0.73Ω
0.73Ω
ID
12A
12A
12A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM e
650
±30
12
48
12 d
48d
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
250 60
PD 1.67 0.4
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
EAS 607
IAS 9
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.6
62.5
2.5
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 4. 2012.Nov.
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEP12N65.PDF ] | |
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