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NCE3055 fiches techniques PDF

NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE3055
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE3055 fiche technique
http://www.ncepower.com
Pb Free Product
NCE3055
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3055 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
General Feature
VDS =60V,ID =3.0A
RDS(ON) <100m@ VGS=10V
RDS(ON) < 120m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
Battery switch
DC/DC converter
D
G
S
Schematic diagram
SOT-89 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3055
NCE3055
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
Min Typ Max Unit
60 65
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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