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PDF TF408 Data sheet ( Hoja de datos )

Número de pieza TF408
Descripción N-Channel JFET
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No Preview Available ! TF408 Hoja de datos, Descripción, Manual

Ordering number : ENA2008A
TF408
N-Channel JFET
30V, 0.6 to 3.0mA, 5.0mS, USFP
http://onsemi.com
Applications
Low-Frequency general-purpose amplier, impedance conversion, infrared sensor applications
Features
Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
Small IGSS : max --1.0nA (VGS= --20V, VDS=0V)
Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
VDSX
VGDS
IG
ID
PD
Tj
Storage Temperature
Tstg
Conditions
Ratings
30
--30
10
10
30
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
TF408-2-TL-H
0.11 TF408-3-TL-H
0 to 0.02
1
0.175
2
0.15
1 2 1 : Source
2 : Drain
3 : Gate
3 USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
ATL
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
12
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/22912GB TKIM TC-00002704 No. A2008-1/6

1 page




TF408 pdf
Outline Drawing
TF408-2-TL-H, TF408-3-TL-H
TF408
Land Pattern Example
Mass (g) Unit
(0.0005) mm
0.3
Unit: mm
0.2 0.2
No. A2008-5/6

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